CHAROX 1.0 full-wafer characterisation tools for VCSEL oxidation metrology

CHAROX 1.0

Pre-sales open
For VCSELs quality control

As demand for high-quality VCSELs accelerates across datacom, 3D sensing, automotive, and industrial applications, leading manufacturers are strengthening their quality control capabilities both upstream and downstream of the VCSEL wet thermal oxidation process.
The CHAROX 1.0 is ALOXTEC’s answer: a solution exclusively dedicated to wafer characterization, available in manual or automated configurations and capable of processing up to ?? wafers per month, while delivering the same characterization performance as that integrated into our ALOX GEN 1.4L Manual , ALOX GEN 1.4L Automatic, and ALOX GEN2.0 HV Auto equipment.

60+ tools used worldwide in 21 customers sites
Support and Sales representatives in EU, Asia & US

Technical specifications of the CHAROX 1.0

 

Specification Value
Throughput ? wafers/month
Wafer sizes 3” to 8”
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  • Fully automated or full operator control
  • Robotic or manual wafer handling
  • SECS/GEM connectivity compliance (SEMI E30, E37, E40, E42)
Proprietary vision system
  • X/Y/Z motion with full wafer view
  • 2 cameras (low and high magnification)
  • Monochromator capability included
Supervision and vision software
  • User friendly interface
  • Automatic pattern recognition
  • Automatic process & measurement algorithms
Availability Presales open, contact ALOXTEC for configuration and lead time
CHAROX 1.0 die-level inspection of VCSEL wafers before wet thermal oxidation

CHAROX 1.0: Full-Wafer Characterisation for Pre-Oxidation and Post-Oxidation

 

Pre-Oxidation Characterisation: EPI Screening and Upstream Non-Conformance Detection

The CHAROX 1.0 characterisation tool enables full-wafer, die-level inspection prior to wet oxidation, transforming incoming wafer qualification into a quantitative, spatially resolved dataset. The mesa size map provides a complete geometric characterisation of each structure across the wafer, capturing etch dimensions, shape and positional accuracy with ultra-high measurement resolution. This dataset acts as a pre-oxidation reference, allowing process engineers to identify lithography and etch non-uniformities before they propagate into oxidation-induced variability. Variations detected at this stage are not attributable to the oxidation step, enabling immediate isolation of upstream process deviations. As a result, pre-oxidation characterisation becomes a structured quality gate for EPI wafers, reducing the risk of introducing non-conforming material into the oxidation process.

Post-Oxidation Characterisation: Five Simultaneous Measurement Outputs for a Complete Die-Level Reconstruction of Process Outcome

Following wet oxidation, the CHAROX 1.0 generates a complete characterisation sweep across the full wafer surface, producing five simultaneous measurement outputs: oxidation depth, aperture size, circularity, mesa geometry and emitting wavelength.Each output captures a distinct dimension of process and device quality, and together they form a spatially resolved dataset at die level. This dataset does not provide a summary indicator, but a quantitative reconstruction of the oxidation outcome across the wafer:

  • Oxidation depth maps reveal the lateral progression of the oxidation front,
  • Aperture maps translate this progression into device-critical geometry,
  • Wavelength maps provide a direct optical performance indicator.

The result is a complete and coherent view of process outcome, enabling immediate assessment of uniformity, performance distribution and specification compliance across the entire wafer.

Full-wafer characterisation tools for VCSEL pre-oxidation and post-oxidation process control

Cross-Step Diagnosis: Root Cause Isolation Across EPI Growth, Lithography and Oxidation

The simultaneity of the five measurement outputs enables a diagnostic capability that extends beyond the oxidation step itself. Because all datasets are acquired on the same wafer, within the same spatial reference frame, correlations and non-correlations between outputs carry direct information about process origin. An aperture gradient that correlates with an oxidation depth gradient indicates a process-induced non-uniformity, typically linked to temperature, water vapour or pressure conditions. The same aperture variation without corresponding depth variation reveals a material-driven deviation, such as local EPI composition differences. The mesa size map provides a direct reference to upstream lithography and etch quality, enabling cross-step analysis across the fabrication flow. This structured interpretation framework transforms characterisation into a process diagnostic tool, directing corrective action to the appropriate step: oxidation, EPI growth or upstream patterning.

Yield Prediction and SPC (Statistical Process Control): From Aperture Map to Lot Disposition

The aperture size map generated by the CHAROX 1.0 provides a direct, quantitative link between process output and device performance, making it the primary wafer-level yield predictor. Each die is assigned a measured aperture diameter that can be compared against specification windows for threshold current, emission wavelength and modulation performance. Dies within specification are predicted to pass electrical test, while out-of-specification dies are identified at the characterisation stage. This enables early yield estimation, prior to downstream testing, and supports informed lot disposition decisions. In addition, the structured dataset can be integrated into statistical process control frameworks, where run-to-run metrics such as mean aperture, aperture spread and wafer-level uniformity are trended over time. This transforms characterisation from a measurement step into a decision framework, supporting both immediate process control and long-term yield optimisation.

Key Benefits of
the CHAROX 1.0

Full Wafer Quality Control from
Pre-Oxidation to Post-Oxidation

Enables die-level characterisation before and after oxidation, transforming incoming EPI screening into a structured quality gate and delivering a complete reconstruction of process outcome across the wafer.

Advanced Process Diagnosis and
Root Cause Isolation

Five simultaneous measurement outputs provide a unique dataset to distinguish process-induced deviations from material-related defects, enabling targeted corrective actions across EPI, lithography and oxidation.

Wafer-Level Yield Prediction and
Process Control

Aperture mapping directly predicts device performance and electrical test compliance, enabling early yield estimation and seamless integration into SPC frameworks for improved process stability and lot disposition.

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